| Year of Publication |
2013
|
| Journal |
Semiconductor science and technology 28 (8), 085005, 2013
|
| Volume |
28
|
| Number of Pages |
085005
|
| Download citation |
Publications
Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic
Associate Professor of Physics
Citation: Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor science and technology 28 (8), 085005, 2013. 2013;28:085005.
In: Semiconductor science and technology 28 (8), 085005, 2013
Published by: IOP Publishing , 2013
google Scholar link: https://scholar.google.com/citations?view_op=view_citation&hl=en&user=pq1RqksAA…
Cited by: 4