Ab initio study of the bandgap engineering of Al 1- x Ga x N for optoelectronic applications

Year of Publication	2011
Journal	Journal of Applied Physics
Volume	109
Number of Pages	023109
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19-12-2018

Associate Professor of Physics

Citation: Ab initio study of the bandgap engineering of Al 1- x Ga x N for optoelectronic applications. Journal of Applied Physics. 2011;109:023109.

In: Journal of Applied Physics

Published by: AIP , 2011

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