Year of Publication
2016
Journal
Journal of Electronic Materials 45 (1), 746, 2016
Volume
45
Number of Pages
746
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Engel-Vosko GGA Approach Within DFT Investigations of the Optoelectronic Structure of the Metal Chalcogenide Semiconductor CsAgGa2Se4

Associate Professor of Physics

Citation: Engel-Vosko GGA Approach Within DFT Investigations of the Optoelectronic Structure of the Metal Chalcogenide Semiconductor CsAgGa2Se4. Journal of Electronic Materials 45 (1), 746, 2016. 2016;45:746.

In: Journal of Electronic Materials 45 (1), 746, 2016

Published by: Springer , 2016

Cited by: 3