| Year of Publication |
2016
|
| Journal |
IEEE Transactions on Electron Devices 63 (12), 4899-4906, 2016
|
| Volume |
63
|
| Number of Pages |
4899–4906
|
| Download citation |
Publications
Transport phenomenon in boron–GroupV linear atomic chains under tensile stress for nanoscale devices and interconnects: first principles analysis
Associate Professor of Physics
Citation: Transport phenomenon in boron–GroupV linear atomic chains under tensile stress for nanoscale devices and interconnects: first principles analysis. IEEE Transactions on Electron Devices 63 (12), 4899-4906, 2016. 2016;63:4899–4906.
In: IEEE Transactions on Electron Devices 63 (12), 4899-4906, 2016
Published by: IEEE , 2016
google Scholar link: https://scholar.google.com/citations?view_op=view_citation&hl=en&user=pq1RqksAA…
Cited by: 8