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Year of Publication
2004
Journal
Semiconductor science and technology
Volume
19
Number of Pages
1220
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Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties

Professor of Physics

Citation: 1.Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties. Semiconductor science and technology. 2004;19:1220.

In: Semiconductor science and technology

Published by: IOP Publishing , 2004

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