Year of Publication
2001
Journal
Journal of Electronic Materials 30 (12), 1483-1488, 2001
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Nickel silicide as a contact material for submicron CMOS devices

Department Chair & Professor Of Mechanical Engineering (Office: BG.53)

Citation: Nickel silicide as a contact material for submicron CMOS devices. Journal of Electronic Materials 30 (12), 1483-1488, 2001. 2001.

In: Journal of Electronic Materials 30 (12), 1483-1488, 2001

Published by: DZ Chi, D Mangelinck, AS Zuruzi, ASW Wong, SK Lahiri , 2001

Cited by: 46