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| Year of Publication |
2001
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| Journal |
Journal of Electronic Materials 30 (12), 1483-1488, 2001
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Publications
Nickel silicide as a contact material for submicron CMOS devices
Department Chair & Professor Of Mechanical Engineering (Office: BG.53)
Citation: 1.Nickel silicide as a contact material for submicron CMOS devices. Journal of Electronic Materials 30 (12), 1483-1488, 2001. 2001.
In: Journal of Electronic Materials 30 (12), 1483-1488, 2001
Published by: DZ Chi, D Mangelinck, AS Zuruzi, ASW Wong, SK Lahiri , 2001
google Scholar link: https://scholar.google.com/citations?view_op=view_citation&hl=en&user=lBV1GBAAA…
Cited by: 46