2015

Wind Energy Development Policies in Developing Countries and Their Effects: Turkey, Egypt and Prospects for Pakistan

Sheraz Alam Malik,, Journal Article, , Wind Energy Development Policies in Developing Countries and Their Effects: Turkey, Egypt and Prospects for Pakistan. (2015). Wind Energy Development Policies in Developing Countries and Their Effects: Turkey, Egypt and Prospects for Pakistan. American Journal Of Energy And Power Engineering 2 (5), 56-61, 2015, 2(5), 56-61.

2015

Modified Becke–Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

Souraya Goumri Said,, Journal Article, , Modified Becke–Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. (2015). Modified Becke–Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. Materials Science In Semiconductor Processing 39, 606-613, 2015, 39, 606–613.

2015

Modified Becke–Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4

Souraya Goumri Said,, Journal Article, , Modified Becke–Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. (2015). Modified Becke–Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4. Materials Science In Semiconductor Processing, 39, 606–613.

2015

Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba (Si, Al) 5 (O, N) 8 compounds for light-emitting diodes devices

Souraya Goumri Said,, Journal Article, , Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba (Si, Al) 5 (O, N) 8 compounds for light-emitting diodes devices. (2015). Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba (Si, Al) 5 (O, N) 8 compounds for light-emitting diodes devices. Current Applied Physics 15 (10), 1160-1167, 2015, 15, 1160–1167.

2015

Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba (Si, Al) 5 (O, N) 8 compounds for light-emitting diodes devices

Souraya Goumri Said,, Journal Article, , Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba (Si, Al) 5 (O, N) 8 compounds for light-emitting diodes devices. (2015). Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba (Si, Al) 5 (O, N) 8 compounds for light-emitting diodes devices. Current Applied Physics, 15, 1160–1167.

2015

DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: transparent materials for large energy conversion

Souraya Goumri Said,, Journal Article, , DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: transparent materials for large energy conversion. (2015). DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: transparent materials for large energy conversion. Solid State Sciences 48, 244-250, 2015, 48, 244–250.

2015

DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: Transparent materials for large energy conversion

Souraya Goumri Said,, Journal Article, , DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: Transparent materials for large energy conversion. (2015). DFT and modified Becke Johnson (mBJ) potential investigations of the optoelectronic properties of SnGa4Q7 (Q= S, Se) compounds: Transparent materials for large energy conversion. Solid State Sciences, 48, 244–250.

2015

Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se)

Souraya Goumri Said,, Journal Article, , Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se). (2015). Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se). Semiconductor Science And Technology 30 (10), 105018, 2015, 30, 105018.

2015

Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se)

Souraya Goumri Said,, Journal Article, , Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se). (2015). Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X= Zr, Hf and Y= S, Se). Semiconductor Science And Technology, 30, 105018.

2015

Exploring the optoelectronic structure and thermoelectricity of recent photoconductive chalcogenides compounds, CsCdInQ3 (Q = Se, Te)

Souraya Goumri Said,, Journal Article, , Exploring the optoelectronic structure and thermoelectricity of recent photoconductive chalcogenides compounds, CsCdInQ3 (Q = Se, Te). (2015). Exploring the optoelectronic structure and thermoelectricity of recent photoconductive chalcogenides compounds, CsCdInQ3 (Q = Se, Te). Rsc Advances, 5, 9455–9461.