2013

A uniqueness result for an inverse problem in a space-time fractional diffusion equation

statar, 649, Journal Article, , A uniqueness result for an inverse problem in a space-time fractional diffusion equation. (2013). Electron. J. Differ. Equ 257, 1-9, 2013.

2013

The origin of magnetism in transition metal-doped ZrO2 thin films: experiment and theory

sosaid, 650, Journal Article, , The origin of magnetism in transition metal-doped ZrO2 thin films: experiment and theory. (2013). Journal of Physics: Condensed Matter 25 (43), 436003, 2013, 25, 436003.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic

sosaid, 650, Journal Article, , Goumri-Said, S., Ozisik, H., Deligoz, E., & Kanoun, M. B. (2013). Ab initio investigations of the strontium gallium nitride ternaries Sr3GaN3 and Sr6GaN5: promising materials for optoelectronic. Semiconductor Science and Technology, 28, 085005.

2013

Highly tunable-emittance radiator based on semiconductor-metal transition of VO2 thin films

ahendaoui, 973, Journal Article, , Highly tunable-emittance radiator based on semiconductor-metal transition of VO2 thin films. (2013). Applied Physics Letters 102 (6), 061107, 2013.